Professor Yoshiji HORIKOSHI (堀越 佳治)

Presentation on theme: "Professor Yoshiji HORIKOSHI (堀越 佳治)"— Presentation transcript:

1 Professor Yoshiji HORIKOSHI (堀越 佳治)
2008 IWNE Professor Yoshiji HORIKOSHI (堀越　佳治) School of Science and Engineering, Waseda University Current Research Field: Electron/electric material engineering 2008 IWNE

2 Professor Yoshiji HORIKOSHI
2008 IWNE Professor Yoshiji HORIKOSHI Graduate School Attended Graduate School : North-East University(東北 大学) Graduate Course : Doctor Division of Engineering Specialty (Japanese) : 電気 工学 Degree Degree (Japanese) : 工学博士 Degree Acquisition University Name (Country) (Japanese): 東北大学 Degree Field Field Name (Japanese) : 結晶工学 Field Name (English) : Crystal Growth 2008 IWNE

3 Professor Yoshiji HORIKOSHI
2008 IWNE Professor Yoshiji HORIKOSHI Employment Record in Research (Japanese) 日本電信電話公社(現NTT基礎研究所) 西独マックスプランク固体研究所客員研究員 英国インペリアルカレッジ客員研究員 東北大学電気通信研究所客員教授 北海道大学量子界面エレクトロニクス研究所客員教授 東京大学大学院工学研究科講師 早稲田大学材料技術研究所研究員 (English) Research stuff, NTT Basic Research Laboratories Exec. Manager, Physical Science Res. Lab., NTT(1990) Guest Researcher, Max-Planck-Institut fur Festkorperforschung, Stuttgart Guest Researcher, Imperial College, London Guest Professor, Tohoku University, Sendai Guest Professor, Hokkaido University, Sapporo Lecturer, University of Tokyo Professor, Kagami Memorial Research Laboratory for Materials Science and Technology, Waseda University 2008 IWNE

4 Professor Yoshiji HORIKOSHI
2008 IWNE Professor Yoshiji HORIKOSHI Academic Award 1. Academic Award (Japanese) 電子情報通信学会奨励賞 Year 1975 2. Academic Award (Japanese) NTT本部長記念盾 Year 1976 3. Academic Award (Japanese) 電子情報通信学会論文賞 Year 1977 4. Academic Award (Japanese) NTT本部長表彰研究会開発賞 Year 1987 5. Academic Award (Japanese) 応用物理学会論文賞 Year 1989 6. Academic Award (Japanese) 科学技術庁長官賞研究功績者表彰 Year 1992 7. Academic Award (Japanese) 応用物理学会SSDM92 Best Paper Year 1993 2008 IWNE

5 Professor Yoshiji HORIKOSHI
2008 IWNE Professor Yoshiji HORIKOSHI Research interests Semiconductor Quantum Dot Network Crystal Growth and Characterization of wide-bandgap semiconductors Quantum Effect Devices 選択エピタキシャル成長とナノ構造 低次元物性 ワイドギャップ半導体の成長 フラーレン薄膜の形成と物性 2008 IWNE